来源:学术之家整理 2025-03-18 15:36:49
《Ieee Electron Device Letters》中文名称:《IEEE 电子器件字母》,创刊于1980年,由Institute of Electrical and Electronics Engineers Inc.出版商出版,出版周期Monthly。
IEEE Electron Device Letters 发表与电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性有关的原创性和重要贡献,涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件和新兴材料,应用于生物电子学、生物医学电子学、计算、通信、显示器、微机电学、成像、微执行器、纳米电子学、光电子学、光伏、功率集成电路和微传感器。
旨在及时、准确、全面地报道国内外ENGINEERING, ELECTRICAL & ELECTRONIC工作者在该领域的科学研究等工作中取得的经验、科研成果、技术革新、学术动态等。
| 机构名称 | 发文量 |
| CHINESE ACADEMY OF SCIE... | 84 |
| UNIVERSITY OF CALIFORNI... | 70 |
| XIDIAN UNIVERSITY | 56 |
| NATIONAL YANG MING CHIA... | 49 |
| HONG KONG UNIVERSITY OF... | 48 |
| PEKING UNIVERSITY | 42 |
| UNIVERSITY OF ELECTRONI... | 42 |
| INDIAN INSTITUTE OF TEC... | 36 |
| IMEC | 35 |
| NATIONAL SUN YAT SEN UN... | 35 |
| 国家/地区 | 发文量 |
| CHINA MAINLAND | 577 |
| USA | 282 |
| South Korea | 174 |
| Taiwan | 123 |
| Japan | 65 |
| England | 60 |
| India | 49 |
| Belgium | 37 |
| GERMANY (FED REP GER) | 37 |
| France | 32 |
| 文章引用名称 | 引用次数 |
| Enhancement-Mode Ga2O3 Verti... | 38 |
| An Artificial Neuron Based o... | 36 |
| Recessed-Gate Enhancement-Mo... | 28 |
| Spin Logic Devices via Elect... | 27 |
| Current Aperture Vertical be... | 27 |
| beta-Ga2O3 Delta-Doped Field... | 26 |
| Vertical Ga2O3 Schottky Barr... | 24 |
| 1.85 kV Breakdown Voltage in... | 24 |
| Vertical Ga(2)O(3 )Schottky ... | 23 |
| First Demonstration of a Log... | 22 |
| 被引用期刊名称 | 数量 |
| IEEE T ELECTRON DEV | 1587 |
| IEEE ELECTR DEVICE L | 1317 |
| JPN J APPL PHYS | 594 |
| APPL PHYS LETT | 460 |
| IEEE J ELECTRON DEVI | 445 |
| APPL PHYS EXPRESS | 366 |
| SEMICOND SCI TECH | 277 |
| J APPL PHYS | 268 |
| SOLID STATE ELECTRON | 257 |
| ECS J SOLID STATE SC | 249 |
| 引用期刊名称 | 数量 |
| IEEE ELECTR DEVICE L | 1317 |
| IEEE T ELECTRON DEV | 865 |
| APPL PHYS LETT | 812 |
| J APPL PHYS | 318 |
| ADV MATER | 217 |
| NANO LETT | 150 |
| ACS APPL MATER INTER | 142 |
| SCI REP-UK | 138 |
| NATURE | 132 |
| APPL PHYS EXPRESS | 119 |
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