作者：GONGFeng-fei.niti合金退火形状记忆薄膜复合系统
摘要：The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those of microelectronics fabrication processes. The sputter-deposition conditions, patterning process, and annealing conditions were investigated. The B2 crystal structures of the thin films can be obtained by annealing at 525℃ for 30min. The results from x-ray photoemission spectroscopy indicated that the atomic concentration in the surface of the annealed thin films with preferred structures is comparable with those of the as-deposited films.
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